G.M.W. Kroesen, G.S. Oehrlein, et al.
Applied Physics Letters
The nature of extended defects in silicon introduced by hydrogen containing plasmas has been studied by transmission electron microscopy for a variety of technological processes. Depending on the doping level of the substrate, the substrate temperature and the presence/absence of simultaneous energetic ion bombardment, {111} planar defects, gas bubbles, and a heavily damaged near-surface region have been observed.
G.M.W. Kroesen, G.S. Oehrlein, et al.
Applied Physics Letters
M. Khater, J.-S. Rieh, et al.
IEDM 2004
P. Fahey, Subramanian S. Iyer, et al.
Applied Physics Letters
A.S. Yapsir, G.S. Oehrlein, et al.
Applied Physics Letters