PaperEffect of the electron-plasmon interaction on the electron mobility in siliconM.V. FischettiPhysical Review B
Conference paperMonte carlo simulations of p- And n-channel dual-gate Si MOSFETs at the limits of scalingD.J. Frank, S.E. Laux, et al.Device Research Conference 1993
Conference paperComparison of high speed voltage-scaled conventional and adiabatic circuitsD.J. FrankLPED 1996
PaperInvestigation of the SiO2-induced substrate current in silicon field-effect transistorsZ.A. Weinberg, M.V. FischettiJournal of Applied Physics
