J. Knoch, M. Zhang, et al.
Microelectronic Engineering
The impact of the gate oxide and the silicon-on-insulator (SOI) body thickness on the electrical performance of SOI Schottky-barrier (SB) MOSFETs with fully nickel silicided source and drain contacts is experimentally investigated. The subthreshold swing S is extracted from the experimental data and serves as a measure for the carrier injection through the SBs. It is shown that decreasing the gate oxide and body thickness allows to strongly increase the carrier injection and hence, a significantly improved ON-state of SB-MOSFETs can be obtained. © 2007, IEEE. All rights reserved.
J. Knoch, M. Zhang, et al.
Microelectronic Engineering
S.F. Feste, J. Knoch, et al.
Thin Solid Films
F. Lanzerath, D. Buca, et al.
Journal of Applied Physics
J. Knoch, S. Mantl, et al.
DRC 2004