Quantum Computing Technology and Roadmap
Heike Riel
ESSDERC 2022
This work presents a detailed electrical characterization of planar InGaAs on Silicon MOSFETs from room temperature down to cryogenic temperatures (10 K). The main temperature-dependent electrical parameters of MOSFET operation (threshold voltage Vt, low-field mobility \mu 0, and subthreshold swing SS) were extracted in both linear and saturation regions through the consolidated Y-function method, for gate lengths down to 10 nm. The extracted parameters are first analyzed versus temperature and length and then compared against a more mature technology such as Silicon FDSOI MOSFETs. The work provides insight into the cryogenic operation of III-V MOSFETs and indicates a competing advantage versus Si CMOS for low-power cryogenic quantum computer applications.
Heike Riel
ESSDERC 2022
T. Stecconi, Y. Popoff, et al.
ESSDERC 2022
Franco Stellari, Ernest Y. Wu, et al.
ESSDERC 2022
T.A. Karatsori, K. Bennamane, et al.
ESSDERC 2018