C.B. Mullins, J.W. Coburn
Journal of Applied Physics
In situ Auger electron spectroscopy has been combined with in situ etch-rate measurements, using quartz crystal microbalances, to study the plasma etching of Si and SiO2 surfaces rf biased at -100 V in CF 4-H2 glow discharges. More carbon deposition was observed on the Si surface relative to the SiO2 surface as hydrogen was added to the CF4 plasma. This observation is consistent with a previously suggested model for the large SiO2-to-Si etch-rate ratios observed in CF4-H2 discharges.
C.B. Mullins, J.W. Coburn
Journal of Applied Physics
J.W. Coburn, Harold F. Winters
Applied Physics Letters
J.W. Coburn
Symposium on Process Physics and Modeling in Semiconductor Technology 1990
J.W. Coburn, K. Koehler
Symposium on Plasma Processing 1986