Peter Unger, Gian-Luca Bona, et al.
IEEE Journal of Quantum Electronics
Using metalorganic vapor phase epitaxy to grow GaInAs/InP layers on masked InP substrates patterned with submicron square holes, we have fabricated in situ buried quantum dot arrays for the first time. Starting with mask openings ≥150 nm × 150 nm and utilizing the natural crystal habits to form low-index plane facetted pyramids inside the holes, <m1;&40q>highly regular GaInAs quantum dots embedded in InP are obtained in a single growth step. <m1;&40q>As verified by cathodoluminescence, the dots exhibit very high luminescence efficiencies, even at room temperature, owing to the absence of air-exposed or etch-damaged heterointerfaces.
Peter Unger, Gian-Luca Bona, et al.
IEEE Journal of Quantum Electronics
Naveen Shamsudhin, Hugo Rothuizen, et al.
IFAC 2014
Yvan D. Galeuchet, Hugo Rothuizen, et al.
Microelectronic Engineering
Graham L. W. Cross, Michel Despont, et al.
Materials Research Society Symposium-Proceedings