Shiyi Chen, Daniel Martínez, et al.
Physics of Fluids
Amorphous Si thin films have been crystallized by in situ annealing in the transmission electron microscope. Crystallization occurred at about 700°C in electron-beam-deposited Si films, 400 Å thick, on amorphous Si3N4 substrates. Dendritic Si crystallites were observed with ⟨110⟩ and ⟨111⟩ orientations. The fast growth direction was parallel to ⟨112⟩. All crystallites were internally twinned with Σ = 3, (111) twin boundaries providing nucleation sites for atom attachment. The amorphous-crystal interface propagation was recorded on videotape to study the mechanism of crystallization. Interface velocities were measured at several temperatures and an activation energy of 3·36±0·23 eV was obtained for crystal growth. © 1993 Taylor & Francis Group, LLC.
Shiyi Chen, Daniel Martínez, et al.
Physics of Fluids
A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
Dipanjan Gope, Albert E. Ruehli, et al.
IEEE T-MTT
Kigook Song, Robert D. Miller, et al.
Macromolecules