R.C. Cammarata, C.V. Thompson, et al.
Journal of Materials Research
Paper
In situ transmission electron microscopy studies of silicide-mediated crystallization of amorphous silicon
Abstract
The silicide-mediated phase transformation of amorphous to crystalline silicon was observed in situ in the transmission electron microscope. Crystallization of nickel-implanted amorphous silicon occurred at ∼500°C. Nickel disilicide precipitates were observed to migrate through an amorphous Si film leaving a trail of crystalline Si. Growth occurred parallel to 〈111〉 directions. High resolution electron microscopy revealed an epitaxial NiSi2/Si(111) interface which was Type A. A diffusion-controlled mechanism for the enhanced crystallization rate was determined.
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