Yu-Ming Lin, Joerg Appenzeller, et al.
IEEE TNANO
A series of solid organic acids were used to p-dope carbon nanotubes. The extent of doping is shown to be dependent on the pKa value of the acids. Highly fluorinated carboxylic acids and sulfonic acids are very effective in shifting the threshold voltage and making carbon nanotube field effect transistors to be more p-type devices. Weaker acids like phosphonic or hydroxamic acids had less effect. The doping of the devices was accompanied by a reduction of the hysteresis in the transfer characteristics. In-solution doping survives standard fabrication processes and renders p-doped carbon nanotube field effect transistors with good transport characteristics. © 2006 Elsevier B.V. All rights reserved.
Yu-Ming Lin, Joerg Appenzeller, et al.
IEEE TNANO
Tony Low, Francisco Guinea, et al.
Physical Review Letters
Mathias Steiner, Marcus Freitag, et al.
Applied Physics A: Materials Science and Processing
Joseph Abel, Akitomo Matsubayashi, et al.
Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics