Investigations of silicon nano-crystal floating gate memories
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
Rapid thermal annealing has been used for fabrication of YBaCuO thin films from Cu/BaO/Y2O3 layered structures. The films were deposited on Si substrates by electron-beam evaporation. The interdiffusion at the film/substrate interface has been investigated using Auger depth profiling. With a metal barrier layer, the film showed the superconducting transition between 74-85 K. At anneal temperature above 980°C, Si was found to diffuse throughout the film and degrade the superconductivity of the films. © 1989.
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
Sang-Min Park, Mark P. Stoykovich, et al.
Advanced Materials
A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
Min Yang, Jeremy Schaub, et al.
Technical Digest-International Electron Devices Meeting