Heinz Schmid, Hans Biebuyck, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Paper
Interface states at the Pt silicide-Si interface
Abstract
Ultraviolet-photoemission-spectroscopy (UPS) studies of Pt-Si(100) reveal interface states at the silicide-Si interface; these occur in addition to the bulk silicide states which dominate the interface electronic structure. Because of the absolute energy reference available in UPS, it is clearly established that the interface state distribution (0.6 eV wide) is centered close to the Si valence-band maximum, and it likely overlaps the Si band gap. © 1982 The American Physical Society.
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