H. LeHuy, J.F. Bussière, et al.
IEEE Transactions on Magnetics
The internal tensile stress in polycrystalline diamond films deposited on silicon substrates has been measured from 100 to 700 K by a vibrating-membrane method. The stress increases strongly with temperature, in a manner consistent with the elastic accommodation of the differential thermal strain between diamond and silicon. The results indicate that the films contain a tensile growth stress of about 500 MPa at the deposition temperature of 1123 K. Derived values of the biaxial elastic modulus fall in the range 730-850 GPa.
H. LeHuy, J.F. Bussière, et al.
IEEE Transactions on Magnetics
B.S. Berry, W.C. Pritchet
Journal of Applied Physics
B.S. Berry, W.C. Pritchet
International Conference on Rapidly Quenched Metals 1984
B.S. Berry, W.C. Pritchet
Journal of Applied Physics