Conference paper
Modeling polarization for Hyper-NA lithography tools and masks
Kafai Lai, Alan E. Rosenbluth, et al.
SPIE Advanced Lithography 2007
Electron paramagnetic resonance studies of the cooperative Jahn-Teller system TmAsO4 doped with Gd show that above ∼ 140 K dynamic random strains caused by the strong interaction of the first excited electronic doublet of Tm3+ with phonons are the major mechanisms for the line broadenings. At lower temperatures, because of the weaker interactions of the ground electronic doublet with the phonons, the induced dipolar mechanism for the line broadenings becomes important. © 1977.
Kafai Lai, Alan E. Rosenbluth, et al.
SPIE Advanced Lithography 2007
R. Ghez, J.S. Lew
Journal of Crystal Growth
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EMC 2011
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IEEE J-STARS