True 3-D displays for avionics and mission crewstations
Elizabeth A. Sholler, Frederick M. Meyer, et al.
SPIE AeroSense 1997
The infrared absorption in n-type InP was studied as a function of free-carrier concentration from 3.5×1017 to ∼ 1019 cm-3 in the spectral range of 10 μ to the fundamental absorption edge. The Burstein shifted edge, the normal intraband free-carrier absorption, and the interband free-carrier absorption were analyzed. The fundamental edge shifts to higher energy with increasing free-carrier concentration but only by 47% of the expected Burstein shift. The energy separation between the central-conduction-band minimum and the next higher conduction valleys in InP was found to be 0.90 ± 0.02 eV. © 1970 The American Physical Society.
Elizabeth A. Sholler, Frederick M. Meyer, et al.
SPIE AeroSense 1997
Michiel Sprik
Journal of Physics Condensed Matter
Min Yang, Jeremy Schaub, et al.
Technical Digest-International Electron Devices Meeting
J.K. Gimzewski, T.A. Jung, et al.
Surface Science