T. Thomson, B.D. Terris, et al.
Journal of Applied Physics
The first use of an intense pulsed ion beam to anneal ion-implanted semiconductors is reported. Helium ion channeling shows that a single 80-ns pulse 200-keV H+ ions at ∼100 A/cm2 produced good crystallinity in silicon implanted with 1014 As/cm2 at 100 keV.
T. Thomson, B.D. Terris, et al.
Journal of Applied Physics
L. Schultz, E.A. Giess, et al.
Journal of Applied Physics
J.E.E. Baglin
Nuclear Inst. and Methods in Physics Research, B
Shouheng Sun, Simone Anders, et al.
Journal of Physical Chemistry B