Investigations of silicon nano-crystal floating gate memories
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
Ion beam mixing of certain metals deposited on SiO2 substrates causes reactions to occur which result in the formation of metal-rich suicides in the region of the interface and an increase in the adhesion of the film to the substrate. For other metals, ion irradiation causes lateral transport and coalescence of metal atoms resulting in the formation of an island structure. The results obtained by ion irradiation are compared with previous studies of high-temperature thermal processing of metal films on SiO2. © 1984.
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
Kenneth R. Carter, Robert D. Miller, et al.
Macromolecules
Ranulfo Allen, John Baglin, et al.
J. Photopolym. Sci. Tech.
J.V. Harzer, B. Hillebrands, et al.
Journal of Magnetism and Magnetic Materials