Ion-implantation into As-diffused junctions in Si

Ion implantation into the n+ region of Si gated diodes gives leakage currents equivalent to unimplanted diodes after a 700 ° C anneal and several orders of magnitude lower after a 900 ° C anneal. It is suggested that the improvement in leakage current occurs due to gettering of metallic impurities from the depletion region.