M.H. Brodsky, G.H. Döhler, et al.
physica status solidi (b)
Optical and Hall effect measurements on thin film layers of polycrystalline IrSi1.75 show that this material is a semiconductor. The band gap is approximately 1.2 eV. The films obtained saturated with silicon were p-type with a charge carrier density of the order of 4×1017 cm -3.
M.H. Brodsky, G.H. Döhler, et al.
physica status solidi (b)
M.H. Brodsky
Thin Solid Films
J. De Sousa Pires, F.M. D'Heurle, et al.
Applied Physics Letters
D.P. Divincenzo, J. Bernholc, et al.
Physical Review B