B.D. Silverman, B.A. Scott
The Journal of Chemical Physics
A new method of amorphous hydrogenated silicon (a-Si) chemical vapor deposition is presented in which SiH4 is homogeneously decomposed at high temperature and pressure to produce films on low-temperature substrates having up to 30-at. % H and properties very similar to plasma-deposited material. Kinetic studies provide a film growth activation energy of 54 kcal/mole, confirming that SiH2 is the primary gas phase intermediate. A mechanism based on SiH2 chemistry is presented to account for the rapid surface reactions leading to a-Si growth and its possible relevance to the plasma deposition process is emphasized.
B.D. Silverman, B.A. Scott
The Journal of Chemical Physics
J.F. Nijs, Jerzy Kanicki, et al.
E. C. Photovoltaic Solar Energy Conference 1983
T. Nogami, S. Lane, et al.
VMIC 2005
A. Jain, S. Rogojevic, et al.
Thin Solid Films