J.Z. Sun, L.S. Yu-Jahnes, et al.
IEEE TAS
We demonstrate that lanthanum gallate (LaGaO3) has considerable potential as an electronic substrate material for high-temperature superconducting films. It provides a good lattice and thermal expansion match to YBa2Cu3O7-x, can be grown in large crystal sizes, is compatible with high-temperature film processing, and has a reasonably low dielectric constant (ε≅25) and low dielectric losses. Epitaxial YBa2Cu3O7-x films grown on LaGaO3 single-crystal substrates by three techniques have zero resistance between 87 and 91 K.
J.Z. Sun, L.S. Yu-Jahnes, et al.
IEEE TAS
J.Z. Sun, W.J. Gallagher, et al.
Applied Physics Letters
W.J. Gallagher
Physica B+C
E.A. Giess, R.L. Sandstrom, et al.
IBM J. Res. Dev