Heinz Schmid, Hans Biebuyck, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Hot spots with dimensions of only a few nanometers form in numerous nanoelectronic devices. Based on recent advances in spatial resolution, these hotspots can now be studied by means of Scanning Thermal Microscopy (SThM). Here, we discuss SThM for nanoscale thermometry in comparison with other established thermometry techniques. In situ measurements of semiconductor channels for logic, and phase change memory devices are used to demonstrate today's measurement capabilities. Temperature fields characterize not only energy dissipation in in-tact devices but can also serve to identify device failure and fabrication issues.
Heinz Schmid, Hans Biebuyck, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Noelia Vico Triviño, Philipp Staudinger, et al.
PVLED 2019
Svenja Mauthe, Philipp Staudinger, et al.
CLEO 2019
Preksha Tiwari, Svenja Mauthe, et al.
NUSOD 2020