M.A. Tischler, H. Baratte, et al.
Journal of Crystal Growth
We report the first observation of long-range order in a semiconductor III-V ternary alloy. AlxGa1-xAs thin crystals grown by metal-organic chemical vapor deposition or molecular-beam epitaxy have Ga atoms preferentially occupying the 0,0,0 and 0 sites and Al atoms the ,0, and 0 sites in each unit cell. Our results indicate that this ordered structure is the equilibrium state of AlxGa1-xAs. © 1985 The American Physical Society.
M.A. Tischler, H. Baratte, et al.
Journal of Crystal Growth
D.J. Wolford, G.D. Gilliland, et al.
Gallium Arsenide and Related Compounds 1991
C. Tejedor, J.M. Calleja, et al.
Physical Review B
J.A. Kash, J.M. Hvam, et al.
Physical Review B