M. Hargrove, S.W. Crowder, et al.
IEDM 1998
In this paper we demonstrate how low energy electron microscopy can be used to study in situ, and in real time, the growth of thin films on single-crystal surfaces. By studying the growth of Ge and Ag on both the clean and the Sb-terminated Si(111) surface we show how nucleation, growth, island formation, island shapes, thermal stability and the formation of dislocations in the grown films may be observed. Pre-adsorption of Sb strongly modifies the growth of Ge and Ag films on Si(111), leading to more uniform coverage and smoother films in both cases. © 1993.
M. Hargrove, S.W. Crowder, et al.
IEDM 1998
J.H. Stathis, R. Bolam, et al.
INFOS 2005
Sung Ho Kim, Oun-Ho Park, et al.
Small
G. Will, N. Masciocchi, et al.
Zeitschrift fur Kristallographie - New Crystal Structures