Min Yang, Jeremy Schaub, et al.
Technical Digest-International Electron Devices Meeting
Low-frequency "1/f" noise is a major issue for nanoscale devices such at carbon nanotube transistors. We show that nanoscale ballistic transistors give voltage-dependent sensitivity to the intrinsic potential fluctuations from nearby charge traps. A distinctive dependence on gate voltage is predicted, without reference to the number of carriers. This dependence is confirmed by comparison with recent measurements of nanotube transistors. Possible ways of decreasing the noise are discussed. © 2007 American Chemical Society.
Min Yang, Jeremy Schaub, et al.
Technical Digest-International Electron Devices Meeting
Shiyi Chen, Daniel Martínez, et al.
Physics of Fluids
C.M. Brown, L. Cristofolini, et al.
Chemistry of Materials
P.C. Pattnaik, D.M. Newns
Physical Review B