Modeling polarization for Hyper-NA lithography tools and masks
Kafai Lai, Alan E. Rosenbluth, et al.
SPIE Advanced Lithography 2007
Selective metalorganic vapor-phase epitaxy (MOVPE) has been used to make very-low-resistance edge contacts to thin n+ GaAs layers and to two-dimensional electron gas (2DEG) structures. Contact resistance for contacts to the n+ layer are <1 × 10-8 Ω-cm2, close to its fundamental limit. Computer simulations of the 2DEG structure reveal the influence of traps at the regrown GaAs-AlGaAs interface which deplete the corner region of carriers. This corner region is influenced by the slope of the sidewall. Low-resistance contacts to the 2DEG structures were achieved both through the use of a postgrowth anneal and through the use of vertical sidewalls.
Kafai Lai, Alan E. Rosenbluth, et al.
SPIE Advanced Lithography 2007
John G. Long, Peter C. Searson, et al.
JES
E. Burstein
Ferroelectrics
M.V. Fischetti, S.E. Laux
IEDM 1989