B.Z. Weiss, K.N. Tu, et al.
Journal of Applied Physics
Disilicide of rare-earth metals (Dy, Er, Ho, and Gd) and Y have been formed by reacting the metallic film on both n- and p-type silicons at around 350°C for Schottky-barrier height measurement using I-V technique. A passivation coating of W, or Pt, or both was used to prevent the rare earth from oxidation. Schottky-barrier heights of about 0.4 eV on n-Si and 0.7 eV on p-Si were determined.
B.Z. Weiss, K.N. Tu, et al.
Journal of Applied Physics
J.W. Mayer, S.S. Lau, et al.
Journal of Applied Physics
P.A. Psaras, R.D. Thompson, et al.
Journal of Applied Physics
M.O. Aboelfotoh, K.N. Tu
Physical Review B