Sebastiaan Van Dijken, Xin Jiang, et al.
Physical Review B - CMMP
Recent developments in the controlled movement of domain walls in magnetic nanowires by short pulses of spin-polarized current give promise of a nonvolatile memory device with the high performance and reliability of conventional solid-state memory but at the low cost of conventional magnetic disk drive storage. The racetrack memory described in this review comprises an array of magnetic nanowires arranged horizontally or vertically on a silicon chip. Individual spintronic reading and writing nanodevices are used to modify or read a train of ∼10 to 100 domain walls, which store a series of data bits in each nanowire. This racetrack memory is an example of the move toward innately three-dimensional microelectronic devices.
Sebastiaan Van Dijken, Xin Jiang, et al.
Physical Review B - CMMP
Timothy Phung, Aakash Pushp, et al.
Nano Letters
Koyel Banerjee-Ghosh, Oren Ben Dor, et al.
Science
Jie Zhang, Chirag Garg, et al.
Nano Letters