A.B. McLean, R.H. Williams
Journal of Physics C: Solid State Physics
We have measured the temperature dependence of conductance of electrons in 2D sodium induced impurity bands in silicon inversion layers from 4.2 to 80 K observing both activation of electrons to a mobility edge. E1, and nearest neighbor hopping, E3 in magnetic fields up to 25 T. The results are that E1 decreases slightly between 0 and about 20 T and then increases slightly. The prefactor decreases by about a factor of four. E3 increases monotonically. None of these results was expected. © 1984.
A.B. McLean, R.H. Williams
Journal of Physics C: Solid State Physics
Daniel J. Coady, Amanda C. Engler, et al.
ACS Macro Letters
Corneliu Constantinescu
SPIE Optical Engineering + Applications 2009
Ming L. Yu
Physical Review B