Sebastiaan van Dijken, Xin Jiang, et al.
Physical Review Letters
The fabrication of magnetic tunnel junctions with ZnSe barriers with a combination of magnetron sputtering, ion beam sputtering and effusion cell evaporation was discussed. The tunneling magnetoresistance values were ∼10% at room temperature. It was found that the spin polarization through the barrier was about 30.5%. Analysis show that the temperature and barrier thickness dependences of the junction resistance and the tunneling magnetoresistance were consistent with a predominant direct tunneling mechanism when the barrier thickness was less than ∼ 10 nm thick.
Sebastiaan van Dijken, Xin Jiang, et al.
Physical Review Letters
Justin S. Brockman, Li Gao, et al.
Nature Nanotechnology
Li Gao, Xin Jiang, et al.
Applied Physics Letters
Xin Jiang, Roger Wang, et al.
IBM J. Res. Dev