Conference paper
Investigations of silicon nano-crystal floating gate memories
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
A T-1/2 dependence of the log of the resistivity on temperature has been observed for Cd0.6Mn0.4Se in the insulating phase near the metal-insulator transition. The results are consistent with the theory of Efros and Shklovskii for variable range hopping modified by the electron-electron interaction. Estimates for the Thomas-Fermi screening length derived from these data is found to increase with magnetic field. © 1986 The American Physical Society.
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
C.M. Brown, L. Cristofolini, et al.
Chemistry of Materials
Ming L. Yu
Physical Review B
Peter J. Price
Surface Science