William Hinsberg, Joy Cheng, et al.
SPIE Advanced Lithography 2010
A technique has been developed that allows the energy profile of quantum wells in AlxGa1-xAs heterostructures to be mapped directly. The lateral resolution is a few nanometers, which allows the band-bending profile and the conduction-band discontinuity of interfaces within the heterostructure to be probed directly. The technique is based on the excitation of luminescence in the III-V compounds using the tip of a scanning tunneling microscope as a source of electrons. © 1991 The American Physical Society.
William Hinsberg, Joy Cheng, et al.
SPIE Advanced Lithography 2010
F.J. Himpsel, T.A. Jung, et al.
Surface Review and Letters
U. Wieser, U. Kunze, et al.
Physica E: Low-Dimensional Systems and Nanostructures
Corneliu Constantinescu
SPIE Optical Engineering + Applications 2009