Dipanjan Gope, Albert E. Ruehli, et al.
IEEE T-MTT
This paper discusses material/device and fabrication problems related to the high-power performance of fundamental-mode GaAs/AlGaAs and InGaAs/AlGaAs laser diodes. Various views on the stability of these devices and their degradation are presented. Bulk-, mirror- and ohmic-contact-related issues, including the physics/chemistry of defect formation, are discussed. © 1997 Elsevier Science S.A.
Dipanjan Gope, Albert E. Ruehli, et al.
IEEE T-MTT
H.D. Dulman, R.H. Pantell, et al.
Physical Review B
Sang-Min Park, Mark P. Stoykovich, et al.
Advanced Materials
Elizabeth A. Sholler, Frederick M. Meyer, et al.
SPIE AeroSense 1997