H.J. Hovel, M. Almonte, et al.
Solid-State Electronics
A pronounced enhancement in the electrical activation of implanted Si in GaAs is demonstrated by co-implantation of Al. The maximum enhancement (×2) occurs when the Si distribution is shallow, there is a separation between the Si and Al distributions with the Al being deeper, the Si and Al are implanted at doses of ≤1×1013 cm-2, and subsequent annealing of the co-implanted GaAs is performed under capless or proximity cap conditions. A model considering gettering of the oxygen present in the bulk Czochralski-grown GaAs to the implanted Al is invoked to explain the observed activation enhancement.
H.J. Hovel, M. Almonte, et al.
Solid-State Electronics
Y. Sun, A. Majumdar, et al.
IEDM 2013
E. Leobandung, E. Barth, et al.
IEDM 1999
B. Yang, R. Takalkar, et al.
IEDM 2008