P.W. Li, H.K. Liou, et al.
Applied Physics Letters
We report a new metal-semiconductor thin-film diode with an I-V characteristic similar to that of a p-n junction. Its forward bias current is dominated by majority-carrier tunneling, and its reverse breakdown voltage is over 50 V. The fabrication process, the I-V curves, and the Auger depth profile of the interfacial layer are presented.
P.W. Li, H.K. Liou, et al.
Applied Physics Letters
Ulf Gennser, V.P. Kesan, et al.
Applied Physics Letters
H.K. Liou, X. Wu, et al.
Applied Physics Letters
J.D. Cressler, D.D. Tang, et al.
Workshop on Low Temperature Semiconductor Electronics 1989