I.K. Pour, D.J. Krajnovich, et al.
SPIE Optical Materials for High Average Power Lasers 1992
We have used the technique of angle-resolved photoemission with a synchrotron radiation source to probe the electronic states of the metal-semiconductor overlayer systems of K, Cs, and Bi deposited on the GaAs(110) surface. In all cases, we observe changes in the electronic states of the clean surface along with the detection of new metal-induced features. © 1991.
I.K. Pour, D.J. Krajnovich, et al.
SPIE Optical Materials for High Average Power Lasers 1992
Michael Ray, Yves C. Martin
Proceedings of SPIE - The International Society for Optical Engineering
Sang-Min Park, Mark P. Stoykovich, et al.
Advanced Materials
F.J. Himpsel, T.A. Jung, et al.
Surface Review and Letters