A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
The formation of a metastable phase in Al59Ge41 thin films under microsecond laser irradiation is reported. Thin films prepared by co-sputtering are amorphous as-grown. Upon laser processing, amorphous and crystalline phases are detected and analysed using TEM and EDX. A metastable structure formed by laminar-textured aluminium alternating with an hexagonal metastable phase is observed. © 1987 Chapman and Hall Ltd.
A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
P.C. Pattnaik, D.M. Newns
Physical Review B
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
O.F. Schirmer, K.W. Blazey, et al.
Physical Review B