Ronald Luijten, Dae Pham, et al.
ISSCC 2015
It is shown that the response of the electrostatic potential on voltage changes at a conducting line in a microscopic structure is fully described by a pure geometry function. This function is determined by the special microscopic character of the conducting line and by the screening due to neighboring conductors. It already allows a qualitative description of transit-time and cross-talk effects in voltage measurements via electron emission or electro-optical sampling, and provides a basis for the quantitative calculation of these effects. The geometry dependence of this function will be analyzed in detail.
Ronald Luijten, Dae Pham, et al.
ISSCC 2015
Pal Varga, Georgios Kathareios, et al.
CNSM 2017
Nikolaos Chrysos, Fredy Neeser, et al.
INA-OCMC 2013
Nikolaos Chrysos, Fredy Neeser, et al.
IEEE Micro