L.E. Shilkrot, D.J. Srolovitz, et al.
Physical Review B - CMMP
We study the silicon oxidation process and the dynamic structure of the [Formula presented]-Si (001) interface using a grand canonical Monte Carlo approach. We find that Si-O-Si bridge bonds are the main building blocks of the advancing interface, and we identify a kinetic pathway that continually creates new bridge bonds. Oxidation proceeds by local events, with little evidence of “step flow” in the simulation. Yet the interface remains remarkably smooth and abrupt as it advances. © 2002 The American Physical Society.
L.E. Shilkrot, D.J. Srolovitz, et al.
Physical Review B - CMMP
J. Tersoff
Physical Review Letters
J. Tersoff
ICDS 1995
Guillaume Grégoire, Hugues Chaté, et al.
Physical Review E - SNSMP