Q.R. Huang, Ho-Cheol Kim, et al.
Macromolecules
Interface state generation by hot electrons is studied using spin-dependent recombination. Hot electrons with average energy {most positive}2eV produce a paramagnetic recombination center, while hole annihilation at the Si/SiO2 interface does not produce this defect. The implications of these results for microscopic models of interface defect creation are discussed. © 1993.
Q.R. Huang, Ho-Cheol Kim, et al.
Macromolecules
Heinz Schmid, Hans Biebuyck, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
L.K. Wang, A. Acovic, et al.
MRS Spring Meeting 1993
R.J. Gambino, N.R. Stemple, et al.
Journal of Physics and Chemistry of Solids