Conference paper
Investigations of silicon nano-crystal floating gate memories
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
The effect of N content on the structure and properties of rf relatively sputtered α-SiNx was investigated. The N content in the α-SiNx film increases with the N2 flow rate until the stoichiometric composition (Si3N4) is reached. The refractive index asymptotically reaches 1.99 as the N/Si ratio approaches 1.33. The maximum density of 3.2 g/cm3 and hardness of 25 GPa are attained at the stoichiometric composition.
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
Sang-Min Park, Mark P. Stoykovich, et al.
Advanced Materials
Dipanjan Gope, Albert E. Ruehli, et al.
IEEE T-MTT
I. Morgenstern, K.A. Müller, et al.
Physica B: Physics of Condensed Matter