Modal Dispersion and Attenuation Measurements of Silicon Nitride and Silicon Oxynitride Waveguides Using a Streak Camera

Paul May; S. Basu; George L.-T. Chiu; G. Arjavalingam

doi:10.1109/50.47876

Journal of Lightwave Technology

Paper

01 Jan 1990

Modal Dispersion and Attenuation Measurements of Silicon Nitride and Silicon Oxynitride Waveguides Using a Streak Camera

View publication

Abstract

Attenuation and dispersion characteristics for different modes of dielectric waveguides fabricated on silicon have been characterized by measuring the propagation of short pulses using a synchroscan streak camera. © 1990, IEEE

Paper

Ultrashort electron-pulse probing of integrated circuits

Jean-Marc Halbout, Paul May, et al.

Journal of Modern Optics

Paper

Waveform Measurements in High-Speed Silicon Bipolar Circuits Using a Picosecond Photoelectron Scanning Electron Microscope

Paul May, Jean-Marc Halbout, et al.

IEEE T-ED

Conference paper

High speed device testing and internal node diagnostics

George Chiu, Jean-Marc Halbout, et al.

Microlithography 1987

Paper

GaAs multiple quantum well waveguide modulators on silicon substrates

G.V. Treyz, P.G. May, et al.

Applied Physics Letters

View all publications

Abstract

Related

Ultrashort electron-pulse probing of integrated circuits

Waveform Measurements in High-Speed Silicon Bipolar Circuits Using a Picosecond Photoelectron Scanning Electron Microscope

High speed device testing and internal node diagnostics

GaAs multiple quantum well waveguide modulators on silicon substrates