H.J. Hovel
IEEE T-ED
Degradation of near band gap photo-luminescence emission in GaAs with time of exposure to low power, c.w. laser excitation at room temperature is quantitatively described by a model based on defect reactions that are promoted by trapping and recombination of excess carriers at nonradiative recombination sites. The proposed model accurately describes the observed degradation rate, its power and temperature dependence, as well as the absence of degradation at a surface with shallow ion implantation. © 1989 Società Italiana di Fisica.
H.J. Hovel
IEEE T-ED
G.M. Cohen, P.M. Mooney, et al.
Applied Physics Letters
J.P. De Souza, S.W. Bedell, et al.
ISTDM 2006
H.J. Hovel
Applied Physics Letters