Harold J. Hovel, Arthur G. Milnes
IEEE T-ED
A recombination-enhanced defect reaction model is described. It is based on nonradiative recombination of photoexcited carriers at particular crystal defect sites near a semiconductor surface. The model is general and correctly predicts, with only one adjustable parameter, the photoluminescence degradation rate in GaAs, its power dependence, and its independence on lattice temperature.
Harold J. Hovel, Arthur G. Milnes
IEEE T-ED
Daniel Guidotti, John G. Wilman
Applied Physics Letters
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Energy and Environmental Science
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ECS Transactions