Swagath Venkataramani, Jungwook Choi, et al.
IISWC 2019
Ideally, a metal-oxide-semiconductor field-effect transistor (MOSFET) has high drive current and low leakage current. As the MOSFET channel length is reduced to 50 nm and below, the suppression of off-state leakage current becomes an increasingly difficult technological challenge-one that will ultimately limit the scalability of the conventional MOSFET structure. This paper reviews recent research performed at the University of California at Berkeley on advanced transistor structures that can extend the limit of device scaling to below 10 nm for future generations of MOS technology.
Swagath Venkataramani, Jungwook Choi, et al.
IISWC 2019
Yong Liu, Ping-Hsuan Hsieh, et al.
ISSCC 2013
Jakub Kedzierski, Edward Nowak, et al.
IEDM 2002
Leland Chang, Yutaka Nakamura, et al.
VLSI Circuits 2007