Xiaozhu Kang, Hui Zhang, et al.
ICWS 2008
Metal-oxide-semiconductor first effect transistors (MOSFETs) are currently being used in a variety of memory applications. The requirements of memory usage and the characteristics of MOSFET devices and technology have led to a number of unique circuits for these applications. Organization and design considerations of memory systems using MOSFET devices are reviewed, and examples of specific circuits are presented and analyzed. These include random access cells, shift registers. read only storage, and on-chip support circuits; both complementary and noncomplementary circuits are discussed. © 1971, IEEE. All rights reserved.
Xiaozhu Kang, Hui Zhang, et al.
ICWS 2008
Yun Mao, Hani Jamjoom, et al.
CoNEXT 2006
Eric Price, David P. Woodruff
FOCS 2011
Joel L. Wolf, Mark S. Squillante, et al.
IEEE Transactions on Knowledge and Data Engineering