George Markowsky
J. Math. Anal. Appl.
A discretization technique is proposed for the multi-dimensional, steady-state hydrodynamic model of semiconductor devices, and a derivation of the model's appropriate boundary conditions is given. The model includes the complete balance equations for charge, momentum and energy, coupled with Poisson's equation, thus accounting for both diffusion and convection phenomena. The technique, like the Scharfetter-Gummel scheme for the simpler drift-diffusion model, provides an efficient method for solving the hydrodynamic equations, allowing for a more detailed investigation of carrier dynamics in semiconductor devices. © 1986, MCB UP Limited
George Markowsky
J. Math. Anal. Appl.
Y.Y. Li, K.S. Leung, et al.
J Combin Optim
Sankar Basu
Journal of the Franklin Institute
S.F. Fan, W.B. Yun, et al.
Proceedings of SPIE 1989