G. Will, N. Masciocchi, et al.
Zeitschrift fur Kristallographie - New Crystal Structures
We report the fabrication of single-electron tunneling transistors consisting of a single nm-scale aluminum particle connected via tunnel junctions to two leads and capacitively coupled to a third gate electrode. We have used these devices to measure the spectra of discrete electronic quantum energy levels in the particle while tuning the number of electrons it contains. © 1996 Academic Press Limited.
G. Will, N. Masciocchi, et al.
Zeitschrift fur Kristallographie - New Crystal Structures
Sharee J. McNab, Richard J. Blaikie
Materials Research Society Symposium - Proceedings
Douglass S. Kalika, David W. Giles, et al.
Journal of Rheology
Julian J. Hsieh
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films