William Hinsberg, Joy Cheng, et al.
SPIE Advanced Lithography 2010
We observe a strong correlation between changes in the density of paramagnetic silicon-dangling-bond centers and changes in the space-charge density in amorphous silicon nitride films subjected alternately to positive and negative charge injection and optical illumination. Our results provide, for the first time, direct experimental evidence associating a specific point defect with the trapping phenomena in amorphous silicon nitride. We also demonstrate both directly and for the first time the amphoteric nature of the silicon nitride silicon-dangling-bond center. © 1988 The American Physical Society.
William Hinsberg, Joy Cheng, et al.
SPIE Advanced Lithography 2010
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Inorganic Chemistry
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MRS Spring 2000
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