PaperLandau-level broadening and scattering time in modulation doped GaAs/AlGaAs heterostructuresF. Fang, T.P. Smith III, et al.Surface Science
PaperSpectral response of photocurrents in the MOST and the dependence on gate and substrate biasH.C. Card, F. FangJournal of Applied Physics
PaperOptical properties of heavily doped compensated germaniumA.B. Fowler, W.E. Howard, et al.Physical Review
PaperTime-of-flight measurements of minority-carrier transport in p-siliconD.D. Tang, F. Fang, et al.Applied Physics Letters
