PaperGaAs lnjection laser with novel mode control and switching propertiesMarshall I. Nathan, J.C. Marinace, et al.Journal of Applied Physics
PaperTransistor-Like Device Using Optical Coupling Between Diffused P-N Junctions in GaAsR.F. RutzProceedings of the IEEE
PaperThe optical absorption edge of single-crystal AlN prepared by a close-spaced vapor processP.B. Perry, R.F. RutzApplied Physics Letters
